Lupamudra Banerjee

Research Area : Nanoelectronics

Skills

Technical Skills :

• First-principles based study of electronic materials,
• Quantum Transport in low dimensional systems (1D and 2D materials)
• Language and Software C, VHDL, VERILOG, MATLAB

Experimental Skills :

• Non-Equilibrium Green’s Function (NEGF) based nano-electronic device simulation in Quantumwise ATK

Presently working at : Woman Scientist -A, DST, Govt of India

Work Experience:

Guest Faculty 2019 autumn semester

Indian Institute of Information Technology, Kalyani

Department: Computer Science Engg.

Subject taught: Basic Electrical and Electronics Engg

Faculty 2010-2014

Camellia Institute of Technology, Madhyamgram

Department: Electrical and Electronics Engg.

Subjects taught :

Digital Electronics, Analog Electronics, Circuit Theory etc.

Technical Assistant 2004-2010

West Bengal University of Technology, Kolkata

Department: Electronics and Telecommunication Engg.

Technical Assistant 2001-2003

Indian Institute of Information Technology, Kolkata

Department: Electronics and Telecommunication Engg.

Awards

• Member - IEEE Electron Device Society
• Associate Member - Institution of Engineers, India
• Program Committee member – IEEE Conferences

Publications

Publications

Journal :

1. Lopamudra Banerjee, Amretashis Sengupta, Hafizur Rahaman; Carrier transport and thermoelectric properties of differently shaped Germanene (Ge) and Silicene (Si) nanoribbon interconnects; IEEE Transaction on Electron Device, Volume 66,Issue, Jan 2019. doi: 10.1109/TED.2018.2882869.
2. Lopamudra Banerjee, Arnab Mukhopadhyay, Amretashis Sengupta, Hafizur Rahaman; Performance analysis of uniaxially strained monolayer black phosphorus and blue phosphorus n-MOSFET and p-MOSFET; Journal of Computational Electronics, September 2016, Volume 15, Issue 3, pp 919–930, doi: 10.1007/s10825-016-0846-x
3. Arnab Mukhopadhyay, Lopamudra Banerjee, Amretashis Sengupta, Hafizur Rahaman; Effect of stacking order on device performance of bilayer black phosphorene field effect transistor; Journal of Applied Physics, 118(22):224501, December 2015, doi: 10.1063/1.4937148.
4. Bikash Sharma, Arnab Mukhopadhyay, Lopamudra Banerjee, Amretashis Sengupta, Hafizur Rahaman, Chandan Sarkar (2018). Ab initio study of mono-layer 2-D insulators (X-(OH)2 and h-BN) and their use in MTJ memory device. Microsystem Technologies. 10.1007/s00542-018-3728-2.
5. Lopamudra Banerjee, Amretashis Sengupta, Hafizur Rahaman; Modulation of Schottky Barrier height (10, 0) MoS2/WS2 Armchair Nano Ribbon-metal junction with chemical and mechanical doping; Journal of Computational Electronics (Communicated)
6. Lopamudra Banerjee, Amretashis Sengupta, Hafizur Rahaman; Computational Study of hexagonal Boron Nitride clusters embedded in monolayer graphene FET; Institution of Engineering and Technology (IET) (Communicated)

Conference :

1. Lopamudra Banerjee, Amretashis Sengupta, Arnab Mukhopadhyay, Partha Sarathi Gupta, Hafizur Rahaman; Performance analysis of Schottky Barrier height in strained (10, 0) MoS2 Armchair Nano Ribbon-metal junction; 2018 IEEE Electron Device Kolkata Conference (EDKCON), 24-25 November 2018.
2. Lopamudra Banerjee, Arnab Mukhopadhyay, Bikash Sharma, Amretashis Sengupta, Hafizur Rahaman; Performance analysis of 2D Graphene FET embedded with hexagonal Boron Nitride clusters; 2017 Devices for Integrated Circuit (DevIC), 23-24 March 2017, Kalyani, doi: 10.1109/DEVIC.2017.8073998.
3. Lopamudra Banerjee, Amretashis Sengupta, Hafizur Rahaman; Performance analysis of 2 Dimensional AlN nMOS transistor with NEGF simulations; IEEE Symposium on Devices, Circuits and Systems, Paper ID # 72, March 2018, https://ieeexplore.ieee.org/document/8379670
4. Arnab Mukhopadhyay, Lopamudra Banerjee, Bikash Sharma, Amretashis Sengupta, Hafizur Rahaman; Strain modulated variations in monolayer phosphorene in n-MOSFET; IEEE International Conference on Electron Devices and Solid State Circuits, 2015, Singapore.
5. Arnab Mukhopadhyay, Lopamudra Banerjee, Bikash Sharma, Amretashis Sengupta, Hafizur Rahaman, Chandan Kumar Sarkar; Computational Study of Silicene-CNT Double Junctions; 2017 Devices for Integrated Circuit (DevIC), Kalyani, Paper ID # 109, March 2017
6. Bikash Sharma, Arnab Mukhopadhyay, Lopamudra Banerjee, Amretashis Sengupta, Hafizur Rahaman, C. K. Sarkar; Effect of Ca(OH)2, hBN and Mg(OH)2 based insulators as composite oxides in Magnetic Tunnel Junction Memory Device Properties; 2017 Devices for Integrated Circuit (DevIC), Paper ID # 186 , March 2017
7. S. Banerjee, M Ghosh, A Mukhopadhyay, SI Mallick, L Banerjee; Impact of Defects on Electronic Transmission Properties and Spin Transport in Monolayer Silicene; Advances in Industrial Engineering and Management 5(1), 124-129.